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28250 Las Rozas (Madrid)
On-site analysis of special applications such as surface modification, failure analysis and chemical analysis of surfaces
Cadmium telluride (CdTe) is a semiconductor with a wide range of applications ranging from X-ray or gamma-ray detectors to solar cells. Due to the heterogeneity of the CdTe compound, the planarity of the focused ion beam (FIB)-etched structures is uneven and requires optimization of the FIB milling process.
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Published courtesy of: Ondrej Sik and Martin Konecny, CEITEC BUT, Czech Republic, and Veronika Hegrová, NenoVision, Czech Republic.
Microcrystalline silicon is a silicon film where the sizes of the silicon crystals are in the order of tens of nanometers. μc-Si:H thin films are suitable for various devices, such as TFT, thin solar cells with higher IR absorption and more stable against solar radiation. LiteScope supports conductive AFM ( cAFM ) analysis within SEM, helping to easily locate particular structures and assess conductivity mapping with nanometer accuracy.
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Posted courtesy of: RNDr. Antonín Fejfar, Czech Academy of Sciences, Czechia
The metastable Fe78Ni22 thin film growing on a copper substrate has the potential to form magnetic patterns: it is paramagnetic at room temperature, but can be transformed by FIB irradiation into a ferromagnetic material. Simultaneous measurement of AFM and SEM signals revealed that the crystallography transformation is accompanied by a topography change.
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Published courtesy of: Lukas Flajsman, CEITEC BUT, Czechia
Due to miniaturization, failure analysis of advanced integrated circuits is only possible by removing locally focused ion beam (FIB) layers. It is necessary to analyze the flatness and roughness of the pickled surfaces.
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Gallium nitride (GaN) is a very promising material for electronic and optoelectronic applications; however, a variety of dislocations can occur at the interface of different materials, leading to poor quality films.
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Published courtesy of: Roman Gröger, IPM CAS, Czech Republic
Secondary ion time-of-flight mass spectrometry (ToF-SIMS) provides elemental, chemical and molecular state information on the surfaces of solid materials. The alloy with lithium and aluminum particles is used to verify the sensitivity of SIMS detectors for light elements.
The correlation of SEM ToF-SIMS with AFM provides the missing sample topography and allows the calculation of, for example, sputtering rates to optimize the process, which is crucial especially for heterogeneous materials.
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