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Business Park Europa Empresarial
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28250 Las Rozas (Madrid)
AFM-in-SEM focus on semiconductor manufacturing, failure analysis, research and development.
Due to miniaturization, failure analysis of advanced integrated circuits is only possible by removing locally focused ion beam (FIB) layers. It is necessary to evaluate the flatness and roughness of pickled surfaces.
Benefits of LiteScope:
Gallium nitride (GaN) is a very promising material for electronic and optoelectronic applications; however, a variety of dislocations can occur at the interface of different materials, leading to poor quality films.
Benefits of LiteScope:
Published courtesy of: Roman Gröger, IPM CAS, Czech Republic
Semiconductor nanowires are becoming increasingly important due to their novel electronic, photonic, thermal, electrochemical, and mechanical properties. GaAs nanowires have been explored for a wide variety of possible devices, including transistors, photodetectors, LEDs, solar cells, and nanolaser devices. The optimization of the synthesis of GaAs nanowires is crucial to obtain the expected characterizations. Correlative AFM-in-SEM microscopy facilitates efficient quality control and complex analysis of nanowires.
Benefits of LiteScope:
Published courtesy of: David Fuster, Andrés Raya, Álvaro San Paulo and María Ujue González, CNM, CSIC Madrid, Spain
Cadmium telluride (CdTe) is a semiconductor with a wide range of applications ranging from X-ray or gamma-ray detectors to solar cells. Due to the heterogeneity of the CdTe compound, the planarity of the focused ion beam (FIB)-etched structures is uneven and requires optimization of the FIB milling process.
Benefits of LiteScope:
Published courtesy of: Ondrej Sik and Martin Konecny, CEITEC BUT, Czechia