Scanning electron microscopy (SEM), in combination with focused ion beams (FIB), is an ideal technique for keeping up with the rapid evolution of the semiconductor industry by offering analytical capabilities with high levels of precision.
Failure analysis of integrated circuits
The semiconductor industry continues to shrink the size of electronic devices and sub-20 nm technology nodes are already available.
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Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
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Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
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The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
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The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
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Circuit Edit
Circuit edit (CE) is a common technique used in the design-debug phase of integrated circuits. Most CE activities are performed by means of FIB systems equipped with a Gas Injection System (GIS). Such systems allow site-specific and precise material etching as well as the deposition of conductive contacts or insulation.
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
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Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
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Image of an anode surface doped with Pt nanoparticles.
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Ball grid Array (BGA)
Ball grid array (BGA) is a surface-mount packaging technology consisting of an array of solder balls on the underside of a chip package. BGA has been developed in response to the trend in the semiconductor industry towards the miniaturisation of ICs, and in pursuit of higher integration, higher density, and improved functionality.
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
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Through Silicon Vias
Through-silicon vias (TSVs) is an advanced 3D interconnect technology and a crucial component to make 3D integration packaging possible. TSVs vertically interconnect die stacks which results in improved electrical performance (such as high conductivity and low RC delay), lesser power consumption, and form factor for 3D integrated circuits.
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
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Wire Bonding
Using ultra-fine bonding wires of copper and gold continue to be the most widely used method for creating interconnections in high-density multi-chip modules in the microelectronic and semiconductor industry.
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
Button
Slide title
Image of an anode surface doped with Pt nanoparticles.
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Displays
The development of displays has progressed rapidly in recent years, and this has resulted in high quality displays which deliver sharp and bright images, wide viewing angles, vivid colours, all in a touch-sensitive layer.
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
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Micro-electro-mechanical Systems
Micro-Electro-Mechanical Systems (MEMS) is a technology which can be defined most generally as miniaturised mechanical and electro-mechanical elements which are commonly made of Si substrate and fabricated by means of photolithography and chemical etching.
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
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Slide title
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Batteries
There is relentless research in the battery industry which aims at developing the future energy storage systems, a task which continues to be one of the crucial technological challenges. For this purpose, a series of analyses and the characterisation of product reaction effect on electrodes that take place especially at their surface and interface regions are essential. This requires analytical techniques capable of differentiating chemical states with high sensitivity and high spatial resolution.
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
Contact layers under a solder ball imaged at 5 keV with the InBeam SE detector for topographic contrast (left), and the In-Beam f-BSE detector for material contrast (right).
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
Button
Slide title
The beam deceleration improves imaging at low landing energies. Surface features in an Al flake become visible only at a landing energy of 500 eV (right). The multi-detector system enables simultaneous detection of BSE (left) and SE (right) signals.
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